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机译:具有GaAs限制光致发光增强的GaAs Conumence屏障的光电和深层研究
Shenzhen Univ Coll Phys & Optoelect Engn Minist Educ & Guangdong Prov Key Lab Optoelect Devices & Syst Shenzhen 518060 Peoples R China|Natl Acad Sci Inst Semicond Phys UA-03680 Kiev Ukraine;
Taras Shevchenko Natl Univ Kyiv Phys Dept UA-01601 Kiev Ukraine;
IMEM CNR Inst Mat Elect & Magnetism I-43124 Parma Italy;
Taras Shevchenko Natl Univ Kyiv Phys Dept UA-01601 Kiev Ukraine;
IMEM CNR Inst Mat Elect & Magnetism I-43124 Parma Italy;
IMEM CNR Inst Mat Elect & Magnetism I-43124 Parma Italy;
Shenzhen Univ Coll Phys & Optoelect Engn Minist Educ & Guangdong Prov Key Lab Optoelect Devices & Syst Shenzhen 518060 Peoples R China;
Shenzhen Univ Coll Phys & Optoelect Engn Minist Educ & Guangdong Prov Key Lab Optoelect Devices & Syst Shenzhen 518060 Peoples R China;
nanostructure; quantum dot; InAs; InGaAs; photoluminescence; photocurrent; defect;
机译:INAS / INGAAS量子点由INALAS屏障限制,用于增强室温光发射:光电性能和深度水平
机译:变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
机译:嵌入层组成不同的变质InAs / InGaAs量子点结构中的深能级
机译:变质Inas / Ingaas量子点结构:光电性能和深度水平
机译:Igaas量子点的相干壮观= koh?怨恨不同的区别和Ingaas Pollarts
机译:变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
机译:Inas-Gaas和Inas-InGaas-Gaas量子点异质结构的温度依赖性调制反射率和光致发光