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High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain

机译:通过离轴溅射可调节垂直磁各向异性的高质量th铁石榴石薄膜–磁性和薄膜应变之间的关系

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摘要

Thulium iron garnet (TmIG) films with perpendicular magnetic anisotropy (PMA) were grown on gadolinium gallium garnet (GGG) (111) substrates by off-axis sputtering. High-resolution synchrotron radiation X-ray diffraction studies and spherical aberration-corrected scanning transmission electron microscope (Cs-corrected STEM) images showed the excellent crystallinity of the films and their sharp interface with GGG. Damping constant of TmIG thin film was determined to be 0.0133 by frequency-dependent ferromagnetic resonance (FMR) measurements. The saturation magnetization (Ms) and the coercive field (Hc) were obtained systematically as a function of the longitudinal distance (L) between the sputtering target and the substrate. A 170% enhancement of PMA field (H⊥) was achieved by tuning the film composition to increase the tensile strain. Moreover, current-induced magnetization switching on a Pt/TmIG structure was demonstrated with an ultra-low critical current density (jc) of 2.5 × 106 A/cm2, an order of magnitude smaller than the previously reported value. We were able to tune Ms, Hc and H⊥ to obtain an ultra-low jc of switching the magnetization, showing the great potential of sputtered TmIG films for spintronics.
机译:通过离轴溅射在with镓镓石榴石(GGG)(111)衬底上生长具有垂直磁各向异性(PMA)的铁石榴石(TmIG)膜。高分辨率同步辐射X射线衍射研究和球面像差校正的扫描透射电子显微镜(Cs校正的STEM)图像显示出薄膜的出色结晶度以及与GGG的清晰界面。通过频率依赖性铁磁共振(FMR)测量,确定TmIG薄膜的阻尼常数为0.0133。系统地获得了饱和磁化强度(Ms)和矫顽场(Hc),该强度是溅射靶与基板之间的纵向距离(L)的函数。通过调节膜组成以增加拉伸应变,可使PMA场(H +)提高170%。此外,在Pt / TmIG结构上的电流感应磁化开关具有2.5×10 6 A / cm 2 的超低临界电流密度(jc),比先前报告的值小一个数量级。我们能够调节Ms,Hc和H⊥以获得超低的开关磁化强度jc,显示出溅射的TmIG膜对于自旋电子学具有巨大的潜力。

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