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Handwritten-Digit Recognition by Hybrid Convolutional Neural Network based on HfO2 Memristive Spiking-Neuron

机译:基于HfO2忆阻钉刺-神经元的混合卷积神经网络手写数字识别

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摘要

Although there is a huge progress in complementary-metal-oxide-semiconductor (CMOS) technology, construction of an artificial neural network using CMOS technology to realize the functionality comparable with that of human cerebral cortex containing 1010–1011 neurons is still of great challenge. Recently, phase change memristor neuron has been proposed to realize a human-brain level neural network operating at a high speed while consuming a small amount of power and having a high integration density. Although memristor neuron can be scaled down to nanometer, integration of 1010–1011 neurons still faces many problems in circuit complexity, chip area, power consumption, etc. In this work, we propose a CMOS compatible HfO2 memristor neuron that can be well integrated with silicon circuits. A hybrid Convolutional Neural Network (CNN) based on the HfO2 memristor neuron is proposed and constructed. In the hybrid CNN, one memristive neuron can behave as multiple physical neurons based on the Time Division Multiplexing Access (TDMA) technique. Handwritten digit recognition is demonstrated in the hybrid CNN with a memristive neuron acting as 784 physical neurons. This work paves the way towards substantially shrinking the amount of neurons required in hardware and realization of more complex or even human cerebral cortex level memristive neural networks.
机译:尽管互补金属氧化物半导体(CMOS)技术取得了巨大进步,但使用CMOS技术构建的人工神经网络可实现与包含10 10 –的人类大脑皮层相当的功能10 11 神经元仍然是巨大的挑战。近来,已经提出了相变忆阻器神经元以实现在消耗少量功率并且具有高集成密度的同时高速运行的人脑级神经网络。尽管忆阻器神经元可以缩小到纳米级,但是10 10 –10 11 神经元的集成仍然面临电路复杂性,芯片面积,功耗等许多问题。在工作中,我们提出了一种CMOS兼容的HfO2忆阻器神经元,它可以与硅电路很好地集成在一起。提出并构造了基于HfO2忆阻神经元的混合卷积神经网络。在混合CNN中,基于时分复用访问(TDMA)技术,一个忆阻神经元可以表现为多个物理神经元。在混合型CNN中,以忆阻神经元充当784个物理神经元的方式展示了手写数字识别。这项工作为大幅减少硬件所需的神经元数量以及实现更复杂甚至人类大脑皮质水平的忆阻神经网络铺平了道路。

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