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A Wafer Level Vacuum Encapsulated Capacitive Accelerometer Fabricated in an Unmodified Commercial MEMS Process

机译:晶圆级真空封装电容式加速度计采用未经修改的商业MEMS工艺制造

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摘要

We present the design and fabrication of a single axis low noise accelerometer in an unmodified commercial MicroElectroMechanical Systems (MEMS) process. The new microfabrication process, MEMS Integrated Design for Inertial Sensors (MIDIS), introduced by Teledyne DALSA Inc. allows wafer level vacuum encapsulation at 10 milliTorr which provides a high Quality factor and reduces noise interference on the MEMS sensor devices. The MIDIS process is based on high aspect ratio bulk micromachining of single-crystal silicon layer that is vacuum encapsulated between two other silicon handle wafers. The process includes sealed Through Silicon Vias (TSVs) for compact design and flip-chip integration with signal processing circuits. The proposed accelerometer design is sensitive to single-axis in-plane acceleration and uses a differential capacitance measurement. Over ±1 g measurement range, the measured sensitivity was 1fF/g. The accelerometer system was designed to provide a detection resolution of 33 milli-g over the operational range of ±100 g.
机译:我们介绍了未经修改的商用微机电系统(MEMS)工艺中的单轴低噪声加速度计的设计和制造。 Teledyne DALSA Inc.推出的新的微细加工工艺,即MEMS惯性传感器集成设计(MIDIS),允许以10毫托的晶圆级真空封装,从而提供了高品质因数并减少了对MEMS传感器设备的噪声干扰。 MIDIS工艺基于单晶硅层的高纵横比整体微加工,该单晶硅层真空封装在其他两个硅处理晶圆之间。该过程包括密封的硅通孔(TSV),以实现紧凑的设计以及与信号处理电路的倒装芯片集成。拟议的加速度计设计对单轴平面加速度敏感,并使用差分电容测量。在±1 g的测量范围内,测得的灵敏度为1fF / g。加速度计系统旨在在±100 g的工作范围内提供33毫克的检测分辨率。

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