基于小信号S参数的MOSFET射频功率放大器设计

摘要

介绍了如何利用场效应管的小信号散射(S)参数设计射频功率放大器,并采用此设计方法,选用场效应管,设计了一种工作在160 MHz频段的金属氧化物半导体场效应管(MOSFET)功率放大器.在工作频段内,功率放大器增益大于23 dB,输入端口的匹配网络的回波损耗S11优于-19 dB.实例证明:该设计方法仿真简单,易于实现,具有重要的工程应用价值.%In the actual design of radio frequency(RF)power amplifier,the device manufacturers often provide only small-signal scattering (S )-parameters and static I-V curve of a metal oxide semiconductor field effect transistor(MOSFET)transistor. Introduce how to design an RF power amplifier with small signal S-parameters. A MOSFET power amplifier operated at 160 MHz is designed with this design method,where a FET transistor from Mitsubishi is selected. The gain of the power amplifier in the working frequency band is larger than 23 dB,and S11 of the input port is prior to -19 dB. The example illustrates that this design method is simple to simulation and easy to implement,which has great value in engineering application.