首页> 外国专利> Use of a thick oxide device as a cascode for a thin oxide transconductance device in MOSFET technology and its application to a power amplifier design

Use of a thick oxide device as a cascode for a thin oxide transconductance device in MOSFET technology and its application to a power amplifier design

机译:厚氧化物器件在MOSFET技术中用作薄氧化物跨导器件的共源共栅及其在功率放大器设计中的应用

摘要

A power amplifier power amplifier includes a transconductance stage and a cascode stage. The transconductance stage that is operable to receive an input voltage signal and to produce an output current signal. The transconductance stage includes a first Metal Oxide Silicon (MOS) transistor having a first gate oxide thickness and a first channel length. The cascode stage communicatively couples to the transconductance stage and is operable to receive the output current signal and to produce an output voltage signal based thereupon. The cascode stage includes a second MOS transistor having a second gate oxide thickness and a second channel length.
机译:功率放大器功率放大器包括跨导级和共源共栅级。跨导级可操作为接收输入电压信号并产生输出电流信号。跨导级包括具有第一栅极氧化物厚度和第一沟道长度的第一金属氧化物硅(MOS)晶体管。共源共栅级可通信地耦合到跨导级,并且可操作来接收输出电流信号并据此产生输出电压信号。共源共栅级包括具有第二栅极氧化物厚度和第二沟道长度的第二MOS晶体管。

著录项

  • 公开/公告号US7199670B2

    专利类型

  • 公开/公告日2007-04-03

    原文格式PDF

  • 申请/专利权人 ARYA REZA BEHZAD;

    申请/专利号US20060582022

  • 发明设计人 ARYA REZA BEHZAD;

    申请日2006-10-17

  • 分类号H03F3/04;

  • 国家 US

  • 入库时间 2022-08-21 21:00:34

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