电子束蒸发挖坑效应膜厚均匀性的计算新方法

摘要

Considering the limitation in analyzing thickness uniformity of films by using the model obtained by ring cone evaporation source,a new calculating method for analyzing the influence of digging effect on thickness uniformity of films has been established;meanwhile,the experimental results of silicon oxides films deposited by eletron beam evaporating at different batches have coompleted to prove the validation and precision of the model.The new calculation method shows that the uniformity becomes worse with the increase of evaporation time.It provides a theoretical basis to design appropriate configuration of the vacuum chamber for compensating the digging effect.The method could be applied in many related research fields,such as experimental teaching,optimization of e-beam vacuum deposition process,and the design and manufature of vacuum deposition instruments.%环形锥面蒸发源模型对沉积膜厚均匀性计算有局限性.针对电子束蒸发镀膜挖坑效应设计一种新的小圆锥体蒸发模型,提出一种新的公式计算沉积膜厚均匀性.采用相同工艺条件,不同时间蒸镀二氧化硅薄膜,验证了小圆锥体模型计算电子束蒸发挖坑膜厚均匀性准确可靠,并成功解释了随着蒸发时间的延长,均匀性变差的原因.该方法可以用于实验教学,真空镀膜工艺以及真空镀膜设备生产领域.