适用于电力系统设备的新一代高压IGBT模块

摘要

A new generation of high voltage IGBT module (HVIGBT) is presented.This HVIGBT module, using fine planar MOSFET gate light punch through technology HVIGBT(FP-LPT-HVIGBT) and soft reverse recovery HV-diode (SR-HVDi) stmctures,exhibits an exceptionally low losses and high rohustness.Detailod test results highlight the smooth switching characteristics, extremely safe operating areas and low leakage current.These performances can well meet the requirements on power electronics devices in power system application.%描述了新一代R系列高压绝缘栅双极型晶体管模块( HVIGBT)的技术特点、性能及其在电力系统中的应用.该模块采用优化平板MOSFET栅轻穿通IGBT技术和软反向恢复高压二极管技术,实现了优异的低损耗性能和高鲁棒性,同时具有平滑的开关特性、卓越的安全工作区能力和低漏电流.实验证明,这些特性能很好地满足电力系统设备对电力电子器件的要求.