用于高分辨率 Si -PIN 探测器的低噪声电荷灵敏前置放大器的设计

摘要

This paper describes the design of low -noise transistor reset mechanism charge sensitive preamplifier for high resolution Si -PIN detectors.With 6μs shaping time,The preamplifier`s zero-capacitance electronics noise is 150 eV( to Si detector ) when the JFET of preamplifier cooled to -20℃.Coupled with a 5 mm2 sensi-tive area, 500 μm thickness Si -PIN detector manufactured by planar technology , the best energy resolution of 5.9 keV X ray can reach to 195eV ,while the detector and JFET cooled with two stage peltier to -20℃.%介绍了一种用于高分辨率Si-PIN探测器的低噪声晶体管反馈电荷灵敏前置放大器的设计。在场效应管制冷到-20℃，成形时间为6μs条件下，前放的零电容电子学噪声（对Si探测器）为150 eV。与平面工艺技术制备的厚度500μm，灵敏面积5 mm2的Si -PIN探测器配用，采用小型温差电制器制冷至-20℃，对5．9 keV X射线的能量分辨率（ FWHM）最好可以达到195 eV。