碳化硅高温压力传感器的研究进展与展望

摘要

Silicon carbide (SiC), owing to its excellent electrical, mechanical and chemical properties, is a promising material for the development of high-temperature pressure sensors. This paper is a review of high-temperature SiC pressure sensor. The SiC material property is introduced. The latest development of the high-temperature SiC pressure sensors is discussed. The structures and characteristics of capacitive, piezoresistive, and optical pressure sensors are presented and compared. Finally, the present problems and challenge for these sensors in China is analyzed.%碳化硅材料由于其优良的电学、机械和化学特性,对于适用于高温恶劣环境下压力传感器等领域的开发,有着广阔的前景,逐渐为人们所重视.简单介绍了碳化硅的材料特性,阐述国外碳化硅高温压力传感器的最新发展成果,比较电容式、压阻式和光学结构压力传感器的结构、特点,分析我国碳化硅压力传感器发展问题与挑战.