重掺InP生长的InGaAs外延层迁移率的测量

摘要

通过衬底剥离技术对以重掺N型磷化铟（N ＋－InP）衬底生长的In0.53 Ga0.47 As外延层的迁移率测量方法进行了研究。首先，采用环氧树脂胶将In0.53 Ga0.47 As外延层粘贴在半绝缘蓝宝石衬底上，以盐酸溶液腐蚀掉InP衬底；之后，采用扫描电子显微镜能谱及金相显微镜对InP衬底的剥离情况及In0.53 Ga0.47 As薄膜的损伤情况进行了检测；最后采用范德堡法对粘贴在半绝缘蓝宝石衬底上的In0.53 Ga0.47 As薄膜的迁移率进行了测量。通过对比试验得出，剥离InP衬底的In0.53 Ga0.47 As薄膜的迁移率测量结果与理论值符合较好，与真值偏差在20％以内。%The measure method for the mobility of In0.53 Ga0.47 As epitaxial layer grown on heavy doping N +-InP sub-strate is studied by substrate stripping technology.Firstly,the In0.53 Ga0.47 As epitaxial layer was pasted on semi-insu-lating sapphire substrate by epoxy glue,and the InP substrate was eroded by hydrochloric acid;then,the stripping ex-tent of InP and the damage of In0.53 Ga0.47 As film were tested by scanning electron microscope-EDS and metalloscope;finally,the mobility of the In0.53 Ga0.47 As epitaxial layer on the semi-insulating sapphire substrate was measured by Van Der Pauw method.The results of contrast tests show that the mobility measurement results of the In0.53 Ga0.47 As film agree well with the theory value after stripping the InP substrate,and the deviation between true value and meas-ured value is less than 20%.