为了提高NiO气敏材料的响应和恢复速度，采用磁场诱导肼还原法和高温氧化法制备Zn掺杂NiO纳米线，研究Zn掺NiO纳米线基传感器对于氨气的敏感性能。结果表明：随着Zn掺杂浓度的提高（摩尔分数2％～5％），XRD衍射峰向小角度偏移0．2°～0．4°，且晶面间距增大0．01～0．02nm，均说明锌离子已成功掺入到NiO晶格中；与未掺杂的NiO纳米线传感器相比，掺杂Zn的NiO纳米线传感器的响应速度提升了6～8倍，恢复速度提升了108～120倍；掺杂的NiO基气敏传感器同时拥有着优异的稳定性和选择性。%In order to improve the responses and recovery speeds of NiO gas sensing materials , Zn-doped NiO nanowires are pre-pared via reduction of Magnetic field induced hydrazine combined with subsequent high temperature oxidation , sensitivity to ammonia of sensors is researched based on Zinc-doped Nickel oxide nanowires .Results obtained from the research show that all the peaks of XRD have a slight shift toward lower angles (0.2°~0.4°) and the interplanar distance has a slight increase (0.01~0.02 nm) with in-creasing Zn dopant concentration from 2 to 5mol%, which is assigned to the successful incorporation of zinc ions in the NiO host struc-ture.The gas sensor based on NiO nanowires with 2~5mol%of Zn doping has 6~8 times faster response speed , and 108~120 times faster recovery speed than pure NiO sensor .Meanwhile, the doped NiO sensor has excellent stability and selectivity toward NH 3 gas o-ver other organic gases .
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