研究纳米尺寸MOSFETs亚阈值特性的一种新方法

摘要

The regular perturbation method was employed to study the subthreshold characteristic of nano-scaled MOSFETs. By solving the Poisson equation with the regular perturbation method, the depletion approximation and charge-sheet model in the equation were avoided which are invalid in nano-scaled MOSFETs. This yielded a conventional exponential form of the subthreshold current, and the subthreshold swing was obtained analytically from this current equation. The validity of our model was verified by comparing ours with the results from the 2D device simulator Medici.%提出了一种用于研究纳米尺寸MOSFETs亚阈值特性的新方法--摄动法.使用摄动法来求解泊松方程,使得在纳米尺寸MOSFETs工作中不再起作用的耗尽层近似和页面电荷模型在求解过程中被避免,由此可以解得一个指数形式的亚阈值电流的表达式,从而得到关于亚阈值摆幅变化的解析表达式.通过把所建立的解析模型的计算结果和Medici仿真软件的模拟结果进行比较,可以证明该适用于分析亚阈值区工作特性的模型具有相当的准确性和可用性.