Anisotropic 2D materials for post-Moore photoelectric devices

摘要

Since the discovery of two-dimensional(2D)graphene[1],2D materials have been widely investigated due to their in-triguing physical/chemical property and outstanding optoelec-tronic performance[1−3].Generally,2D materials can be di-vided into isotropy and anisotropy according to crystal struc-tures.For isotropic 2D materials like graphene and hexagon-al boron nitride,they have obvious lattice symmetry.Where-as,anisotropic 2D materials possess strong anisotropic crys-tal structure(Fig.1(a)),providing new degree of freedom for exploring 2D materials.Currently,2D materials with high aniso-tropy,due to their anisotropic electrical,optical,thermal,and phonon properties,are finding applications in polarization-sensitive photodetection,neural network construction,spin-polarized transport and other emerging fields[3−6].