在单晶硅片上直接电化学沉积制备镍反opal光子晶体

摘要

采用电化学沉积工艺直接向组装在单晶硅片上的聚苯乙烯胶体晶体中填充金属Ni,成功制备了Ni的反opal光子晶体.采用线性扫描伏安法研究了单晶硅表面的化学刻蚀对Ni的电化学沉积过程的影响,并采用扫描电子显微镜(SEM)、X射线衍射等对Ni反opal光子晶体的形貌和结构进行了观察分析,对其光学性能进行了初步研究.研究结果表明,对单晶硅片表面进行化学刻蚀有利于金属Ni的电化学沉积；在PS胶体晶体模板中电化学生长的金属Ni呈多晶状态,去除模板后形成了金属Ni的有序多孔结构.%Electrodeposition was used to fill the voids of PS colloidal crystals on silicon wafer with Ni and Ni inverse opal was obtained. The influence of chemical etching of silicon wafer on the electrodeposition of Ni was studied by using cyclic voltammetry scan. The resulted Ni inverse opal was characterized by scanning electron microscopy and X-ray diffraction. It showed that chemical etching of silicon surface is beneficial for the deposition of Ni on silicon wafer. Ni grown in the voids of PS colloidal crystals is the polycrystalline phase and the ordered porous structure of Ni is formed after the removing of the PS template.