(Ba0.5Sr0.5)TiO3 ferroelectric t hin films were prepared by Sol-Gel processing. Films with thickness of 160nm t reated at 700℃ for 1h showed pure perovskite structure and good dielectric, ins ulating properties, i.e. a dielectric constant of 225, a dielectric loss of 0.04 4, a leakage current density of 8.0×10－8A/cm2. The leakage current density was found to depend on the annealing temperature. The measurement of the J-V characteristics on films indicated the conduction process to be bulk- limited.%研究了一种以水为溶剂的(Ba0.5Sr0.5)TiO3(即BST)液体源溶液,用Sol-Gel技术制备出BST薄膜.性能 测试结果表明,厚度为160nm700℃保温1h的(Ba0.5Sr0.5)TiO3薄膜具有较好 的结构、介电性能和漏电流性能: 在室温下,其为纯立方钙钛矿相,介电常数为225,介电损耗 为0.044,漏电流密度为8.0×10-8A/cm2.进一步研究发现,随着烧结温度的升高,漏 电流降低,薄膜导电遵从空间电荷限制电流模型.
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