射频溅射工艺参数对AZO薄膜结构和性能的影响

摘要

Aluminum doped zinc oxide (AZO) films had been deposited by RF (radio frequency) magnetron sputtering technique. Effect of sputtering parameters (substrate temperature and argon gas pressure) on the structural, surface topography and electrical properties of the deposited films had been studied. Crystalline structure of the deposited films changed significantly with increasing substrate temperature, while argon gas pressure prominently effected the (103) and (002) diffraction intensity ratio. Temperature influenced surface topography seriously, while argon gas pressure did not. As substrate temperature was increased, thin film resistivities decreased sharply and carrier concentration and hall mobility increased prominently. Film resistivities decreased with increasing argon gas pressure, and then increased.%采用射频磁控溅射法制备了掺铝氧化锌(AZO)薄膜,研究了衬底温度及溅射工作压强对沉积薄膜的晶体结构、表面形貌及电学性能的影响.结果显示,随衬底温度增加,薄膜的结晶结构发生显著变化,而溅射工作气压增加主要影响沉积薄膜(103)面与(002)面的相对强度.薄膜的表面形貌受温度影响严重,而气压对形貌的影响相对较小.衬底温度增加,薄膜的电阻率急剧降低,迁移率和载流子浓度都显著增加,而工作气压增加则导致电阻率先减小后增大.