L-丙氨酸掺杂下ZTS晶体法向生长动力学及化学侵蚀研究

摘要

通过对 L-丙氨酸掺杂下 ZTS(100)、(010)及(001)面法向生长速度的研究发现，各晶面法向生长速度随过饱和度的增加而线性增加；随掺杂浓度的增加，(100)面的法向生长速度先增大后减小，而(010)及(001)面的法向生长速度先减小，接着增大，然后又减小。分析表明(100)面以位错生长机制为主，(010)及(001)面以连续生长机制为主。利用光学显微镜在侵蚀后的(100)面观察到矩形位错蚀坑，蚀坑密度为33~308 mm-2；掺杂浓度为1％(摩尔分数)时，蚀坑密度最小。%Via studying the normal growth rates of the (100),(010)and (001)faces of ZTS crystal under differ-ent doping concentrations of L-alanine,we found that the normal growth rate of ZTS crystal increased linearly with the increase of supersaturation.With increase of doping concentration,L-alanine addition led to an initial increase and then a decrease of the normal growth rate of the (100)face.However,L-alanine doping led to a de-crease first,followed by an increase and then a decrease again of the normal growth rates of the (0 1 0 )and (001)faces.The growth of (100)face was featured mainly by the dislocation mechanism,and the growth of (010)and (001)faces are,however,featured by the continuous growth model as supported by the experimental results.Well-defined dislocation pits of rectangular shape were observed on the chemical etching (100)face of ZTS crystal by using optical microscopy.The dislocation density of (100)face was 33-308 mm-2 .Study results indicated that dislocation density could be minimized when L-alanine concentration was set at 1 mol%.