我们用1064nm脉冲激光在硅表面加工出小孔结构,再作高温退火处理形成硅氧化纳米结构,发现该结构在692和694nm波长处有很强的光致受激发光(PL).通过进一步实验发现:该PL发光有明显的阈值表现和光泵线性增强效应,证明该PL发光确实是光致受激辐射.我们提出氧化界面态模型来解释光致受激发光机理,在氧化界面态与价带顶空穴态之间形成粒子数反转.这项工作为硅基上发光器件的光电子集成研发开辟了新的途经.%Stimulated emission has been observed from some oxide structure of silicon when optically excited by radiation of 514nm laser. A sharp peak at 694nm and another one at 692nm are dominated by stimulated emission which can be demonstrated by its threshold behavior and linear transition of emission intensity as a function of pump power in larger range. The oxide structure was fabricated by laser irradiation and annealing treatment of silicon. A model for explaining the stimulated emission is proposed in which the trap stated of the interface between some oxide of silicon and porous nanocrystal play an important role.
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