Si衬底掺杂浓度对InGaN/Si异质单结太阳电池性能的影响

摘要

[Objective]In order to provide a theoretical basis for the preparation of high efficiency solar cells,the effects of doping concentration of p-type Si on the performances of InGaN/Si heterojunction solar cells was studied.[Methods]In this paper,the n-type InGaN doping con-centration was fixed at 1016 cm-3 when the doping concentration NA of p-type Si substrate var-ied,then the results of the current density J SC ,the open circuit voltage VOC ,the filling factor FF,and the photoelectric conversion efficiency Ef of the InGaN/Si heterojunction solar cell device could be obtained by using a one-dimen-sional device simulation program for the Analy-sis of Microelectronic and Photonic Structures (AMPS-1D).[Results]With the increase of the doping concentration NA ,the current density J SC and the filling factor FF increased.When the do-ping concentration reached a certain range (NA>5.00 × 1017 cm-3 ),J SC basically unchanged,a-bout 28.12 mA/cm2 ,FF remained around 0.85 and did not change much.The open circuit volt-age VOC and the photoelectric conversion efficiency Ef both had a positive correlation with the doping concentration NA .As the NA increased,the VOC and Ef increased slowly.[Conclusion]The solar cells with higher doping concentration of Si substrate had better photoelectric conver-sion efficiency.Those with lower doping concentration had lower efficiency,because their cor-responding peak height and width of potential barrier were large,affecting the transport of pho-to-generated carriers.%[目的]研究p-Si衬底掺杂浓度对InGaN/Si异质单结太阳电池性能的影响,为制备高效太阳电池提供理论基础.[方法]将器件的n-InGaN掺杂浓度固定为1016 cm-3,在改变p-Si衬底掺杂浓度NA的情况下,采用一维光电子和微电子器件结构分析模拟软件(AMPS-1D)对InGaN/Si异质单结太阳电池器件的各项性能参数进行模拟.[结果]随着掺杂浓度NA的升高,电池的电流密度J SC和填充因子FF随之升高,当到达一定高的掺杂浓度范围时(NA>5.00×1017 cm-3),J SC基本保持不变,约为28.12 mA/cm2,FF保持在0.85左右且变化不大.开路电压VOC和光电转换效率Ef与掺杂浓度的大小呈正相关关系,随着NA的增大,VOC、Ef缓慢增大.[结论]高掺杂浓度下的太阳电池具有较好的光电转换效率.低掺杂浓度的太阳电池光电转换效率较低,这是因为其对应的尖峰势垒高度和宽度均较大,影响了光生载流子的输运.