栅极宽度对IGBT通态压降的影响

摘要

The I-V characteristics of PT-IGBT was simulated Using＇silvaco＇.Comparing the I-V characteristic curves of the different widths of the gate electrode,the different values of on-state voltage drop of the different widths of the gate electrode were extracted at the same current density,so then the curves of on-state voltage drop to the gate electrode was gained.The simulation consequence is consistent with theory.For the same cell size there is an optimal value of the width of the gate electrode.The on-state voltage drop is reduced throgh reasonable designing.%利用silvaco软件对PT-IGBT的I-V特性进行了仿真,在同一电流密度下提取了不同栅极宽度IGBT的通态压降,得到了通态压降随栅极宽度变化的曲线,该仿真结果与理论分析一致。对于相同的元胞尺寸,栅极宽度存在最优值,只要合理地选取,可以有效地降低通态压降。