SOI MOSFET背栅总剂量辐射效应电流模型

摘要

The problems of SOI CMOS technology based radiation hardened circuit design are long period development and high cost of radiation test. Aiming at these difficulties , this paper proposed a total ionizing dose (TID) model for back-gate transistor by analyzing the TID effect mechanism. The validation of the model shown that the simulation results of back-gate TID model can great agreement with the TID measurement result. The model provides the reliable results to circuit designer , shortening the radiation hardened circuit development cycle.thus , it is very practical.%基于SOI CMOS技术的抗辐射电路设计存在开发周期长、测试费用昂贵的问题.针对这一难点,本文通过对总剂量辐射效应机理的分析,提出了一种背栅总剂量效应电流模型.模型验证结果表明,该背栅总剂量模型仿真结果能高度吻合测试结果,模型能够给电路设计者提供可靠的仿真结果,缩短抗辐射电路开发周期,具有实用意义.