原子层沉积方法制备低温多层Al2 O3/TiO2复合封装薄膜的研究

摘要

Atomic layer deposition (ALD)is considered as one of the most promising thin-film encap-sulation technologies for flexible organic light-emitting diode (OLED)device because of high-quality films formed.In this work,different laminated structures of Al2 O3/TiO2 composite film were pre-pared at low temperature (80 ℃)by ALD method.The growth mechanism of Al2 O3 and TiO2 film was studied.The water vapor barrier properties of the different stacked structures of composite Al2 O3/TiO2 thin film were studied by the calcium film,which were analyzed by water vapor transmission rate (WVTR)test and contact angle measurements.The WVTR of the 5 nm/5 nm×8 dyads Al2 O3/TiO2 composite thin film was 2.1×10-5 g/m2/day and the OLED devices encapsulated by this optimized Al2 O3/TiO2 structure exhibited better lifetime characteristics in high temperature and high humidity test.%原子层沉积(ALD)方法可以制备出高质量薄膜，被认为是可应用于柔性有机电致发光器件(OLED)最有发展前景的薄膜封装技术之一.本文采用原子层沉积(ALD)技术，在低温(80℃)下，研究了 Al2 O3及TiO2薄膜的生长规律，通过钙膜水汽透过率(WVTR)、薄膜接触角测试等手段，研究了不同堆叠结构的多层 Al2 O3/TiO2复合封装薄膜的水汽阻隔特性，其中5 nm/5 nm×8 dyads(重复堆叠次数)的Al2 O3/TiO2叠层结构薄膜的WVTR达到2．1×10-5 g/m2/day.采用优化后的 Al2 O3/TiO2叠层结构薄膜对 OLED器件进行封装，实验发现封装后的 OLED 器件在高温高湿条件下展现了较好的寿命特性.