透射式指数掺杂 AlxGa1-xAs／GaAs 光电阴极光学性能和量子效率仿真研究

摘要

The relational performance parameters that influence the optical properties of exponential-doped transmission-mode Alx Ga1-x As/GaAs photocathodes were studied,by utilizing optical performance functions derived from the film optics matrix method,and the exponential doped transmission-mode Alx Ga1-x As/GaAs photocathode quantum efficiency formula,to consider the photoelectron contribution of the window layer.The effect of different thicknesses of Alx Ga1-x As and GaAs layers,the effect of various Al fractions on the optical properties of exponential-doped transmission-mode Alx Ga1-x As/GaAs photocathodes and quantum efficiency are analyzed through modeling and simulation.The results of the study show that the changes in the thickness of the Alx Ga1-x As window layer and Al mole fraction x primarily influence the shortwave region of optical properties and quantum efficiency curves,while changes in the GaAs emission layer thickness influence both shortwave and longwave regions of optical properties.%为了更好地了解影响透射式指数掺杂 Alx Ga1-x As／GaAs 光电阴极性能的因素，利用薄膜光学的矩阵法推导的光学性能函数，以及考虑窗口层光电子贡献作用的透射式指数掺杂 Alx Ga1-x As／GaAs 光电阴极量子效率公式建模进行仿真，研究了光电阴极中 Alx Ga1-x As 窗口层、GaAs 发射层厚度变化及 Alx Ga1-x As 窗口层中 Al 原子数分数的变化对光学性能和量子效率的影响。结果表明：Alx Ga1-x As 窗口层厚度的变化和 Al 原子数分数的变化对光学性能和量子效率的短波区域影响较大，而 GaAs 发射层的厚度变化对长波和短波区域均有影响。