SOI 器件瞬时剂量率效应的激光模拟技术研究

摘要

为验证激光模拟技术用于半导体SOI器件瞬时剂量率效应研究的可行性，对其优势和主要原理进行了分析。利用0.13μm SOI M OS器件单管测试芯片进行了激光辐射实验，获得了不同尺寸器件辐射所激发的瞬时光电流与激光入射能量的关系曲线，并计算得到了线性拟合后的光电流表达式。通过激光实验数据与器件TCAD仿真结果的对比，获得了本文实验条件下的辐射剂量率‐激光能量模拟等效关系。结果表明，激光模拟技术可用于半导体SOI器件瞬时剂量率效应研究。%In order to verify the feasibility of laser simulation technology used in the research of SOI semiconductor device transient dose rate effect ,the advantage and main principle of laser simulation technology were analyzed .Then the laser simulation experi‐ment was done through using 0.13 μm SOI MOS single device chip ,and the relation curve between transient photocurrent and laser energy as well as the linearized photocur‐rent formula was obtained . In addition , by comparing the experimental result with device TCAD simulation result ,the equivalent relation between dose rate and laser ener‐gy at specific experimental condition was achieved .The result shows that laser simula‐tion technology is effective in the research of SOI semiconductor device transient dose rate effect .