一种pHEMT小信号等效电路模型提取方法

摘要

Pseudomorphic high electron mobility transistor is widely used for designing low noise amplifier and its small signal equivalent circuit is especially important for EDA. In this paper, a reliable parameter extraction method of pHEMT small signal equivalent circuit is present. With this method, the simulation parameter extraction result of a WIN 0.15 urn process pHEMT compared with the small signal equivalent circuit of WIN pHEMT model handbook makes a good agreement.%赝高电子迁移率晶体管(pHEMT)目前广泛应用于低噪声放大器的设计,其小信号等效电路模型对于计算机电子设计自动化(EDA)设计尤为重要.本文介绍了一种pHEMT小信号等效电路模型的参数提取方法,并采用该方法对一款稳懋公司0.15 μm工艺pHEMT进行仿真参数提取,结果与稳懋pHEMT模型手册中小信号模型对比,吻合良好,进而希望该模型应用于低温pHEMT小信号模型参数提取.