大功率全方位反射镜发光二极管性能研究

摘要

在现有工艺条件下通过简单工艺实现大功率GaN基多量子阱全方位反射镜（ODR）发光二极管（LED）的研制，并对试制LED样品进行了光学、电学和色参数三个方面性能测试．测试结果发现，ODR芯片比普通芯片的光强提高了244mcd，极大提高了发光强度；ODRLED光通量、光效、色纯度比普通LED分别提高了6．04％，5．74％，78．64％．ODR LED具有绝对优势是其色温要比普通LED的色温低1804K，明显改善大功率LED的色温缺陷．%In this paper, GaN-based InGaN/GaN MQW power LEDs are fabricated based on the existing technology through a simple processing, and their optical, electrical, and color properties are tested. Results show that the luminous intensity of the chips with omnidirectional reflector（ODR） has an improvement of 244mcd over that with the ordinary chips, and that the ODR LED＇ s luminous flux, the efficiency and the color purity are improved by 6.04% , 5.74% , 78.64% respectively. One of the advantages of the ODR LED is its low color temperature, which is greatly lower than that of the ordinary LED.