首页> 外国专利> High power head lamp for use as military searchlight, has high power light emitting diode light source and reflector, where tightly packed light emitting diode chip is used with light radiation as high-power light emitting diode lamp

High power head lamp for use as military searchlight, has high power light emitting diode light source and reflector, where tightly packed light emitting diode chip is used with light radiation as high-power light emitting diode lamp

机译:大功率头灯,用作军用探照灯,具有大功率发光二极管光源和反射镜,其中紧密封装的发光二极管芯片与光辐射一起用作大功率发光二极管灯

摘要

The high power head lamp (1) has high power light emitting diode light source and a reflector (5), where a light emitting diode chip (8) is used with a light radiation as a high-power light emitting diode lamp. The individual light emitting diode has a maximum distance of one-half diameter of the individual light emitting diode. The light emitting diode is oriented opposite to the emission direction of the headlamp. The light emitting diode chip is carried out with a rear-side cooling body (7) at an arm (4) in a small distance through the reflector. The arm is arranged at a clamp (3).
机译:高功率头灯(1)具有高功率发光二极管光源和反射器(5),其中将具有光辐射的发光二极管芯片(8)用作高功率发光二极管灯。单个发光二极管具有最大直径为单个发光二极管的一半。发光二极管的方向与前照灯的发射方向相反。发光二极管芯片通过臂部(4)上的后侧冷却体(7)以短距离穿过反射器来实施。所述臂布置在夹具(3)处。

著录项

  • 公开/公告号DE102012020931A1

    专利类型

  • 公开/公告日2014-04-30

    原文格式PDF

  • 申请/专利权人 LANZ RÜDIGER;

    申请/专利号DE20121020931

  • 发明设计人 ERFINDER WIRD SPÄTER GENANNT WERDEN;

    申请日2012-10-25

  • 分类号F21V14/02;F21V29;F21V7/06;F21V17/02;

  • 国家 DE

  • 入库时间 2022-08-21 15:37:56

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