部分耗尽绝缘层附着硅静态随机存储器总剂量辐射损伤效应的研究

摘要

通过分析部分耗尽绝缘层附着硅互补金属氧化物半导体静态随机存储器（SRAM）在动态偏置条件下的电学参数和功能参数随累积剂量的变化规律，研究了绝缘层附着硅（SOI）工艺SRAM器件在60^Co-γ射线辐照后的总剂量辐射损伤效应及器件敏感参数与功能错误数之间的相关性，为进一步深入研究大规模SOI集成电路的抗总剂量辐射加固及其辐射损伤评估提供了可能的途径和方法．实验结果表明：辐射引起的场氧和埋氧漏电是功耗电流增大的主要原因；阈值电压漂移造成输出高电平下降、低电平微小上升和峰一峰值大幅降低，以及传输延迟增大；当总剂量累积到一定程度，逻辑功能因关断功能的失效而出现突变错误；传输延迟和输出高电平与逻辑功能错误之间存在一定相关性．%In this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory （SRAM） is irradiated under different total doses. After the SOI SRAM is irradiated by the 6^Co-γray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error.