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Signal integrity and simultaneous switching noise of CMOS devices and systems.

机译:CMOS器件和系统的信号完整性和同时开关噪声。

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A method of calculating Simultaneous Switching Noise (SSN) for Complementary Metal Oxide Semiconductor (CMOS) based systems has been developed and investigated in detail. This model includes output driver negative feedback effects, where as previous models do not include these effects. Several closed-form equations were derived to incorporate negative feedback effects in SSN calculations. Results were compared with the well referenced circuit simulator SPICE, and with measured values. A method of modeling effective inductance of the {dollar}Vsb{lcub}DD{rcub}/Vsb{lcub}SS{rcub}{dollar} chip-package interface has been developed. This model includes the effects of package pin placement, and perforations (if any) in {dollar}Vsb{lcub}DD{rcub}/Vsb{lcub}SS{rcub}{dollar} planes. These models have been implemented in a SSNS (Simultaneous Switching Noise Simulator) architecture. This architecture can be used for calculating SSN for CMOS single packaged chip, or multi-chip assemblies (i.e. MCM, COB, and etc). Device and package interconnect scaling rules were employed to verify performance degradation and limits due to chip-package parasitics. Results were compared using approximate and detailed University of Arizona (UA) simulation tools, and future trends are predicted.; Also, detailed investigations were performed to characterize signal propagation over perforated reference {dollar}(Vsb{lcub}DD{rcub}/Vsb{lcub}SS{rcub}){dollar} planes. A scaled-up model, and a periodically perforated FR-4 card structure were fabricated, and modeled using 2-D, 3-D and S-parameter extraction tools. Simulation results were compared with TDR measured values.; Mechanisms which cause false switching due to the chip-package and package-system interface-generated noise were analyzed. Impact of coupled and SSN on digital systems was investigated using noise immunity characteristics of CMOS input receivers. Output driver design techniques, such as damping and/or skewing output switching waveform to reduce SSN, were analyzed and design guidelines/rules-of-thumb have been developed. Application specific circuit design techniques to reduce SSN are explained.
机译:已经开发并详细研究了一种基于互补金属氧化物半导体(CMOS)系统的计算同时开关噪声(SSN)的方法。该模型包括输出驱动器负反馈效应,而以前的模型不包括这些效应。推导了几个封闭形式的方程,将负反馈效应纳入SSN计算。将结果与参考充分的电路仿真器SPICE以及测量值进行比较。已经开发出一种对{Vsb} Vsb {lcub} DD {rcub} / Vsb {lcub} SS {rcub} {dollar}芯片-封装接口的有效电感进行建模的方法。此模型包括封装引脚放置和{dollar} Vsb {lcub} DD {rcub} / Vsb {lcub} SS {rcub} {dollar}平面中的穿孔(如果有)的影响。这些模型已在SSNS(同步开关噪声模拟器)架构中实现。该体系结构可用于计算CMOS单封装芯片或多芯片组件(即MCM,COB等)的SSN。器件和封装互连的缩放比例规则用于验证由于芯片封装寄生效应而导致的性能下降和限制。使用近似和详细的亚利桑那大学(UA)仿真工具比较了结果,并预测了未来的趋势。此外,还进行了详细的研究,以表征信号在穿孔参考平面(Vsb {lcub} DD {rcub} / Vsb {lcub} SS {rcub}){dollar}上的传播。制作了放大模型和周期性穿孔的FR-4卡结构,并使用2-D,3-D和S参数提取工具进行了建模。仿真结果与TDR测量值进行了比较。分析了由于芯片封装和封装系统接口产生的噪声而导致错误切换的机制。利用CMOS输入接收器的抗扰度特性,研究了耦合和SSN对数字系统的影响。分析了输出驱动器设计技术,例如阻尼和/或倾斜输出开关波形以降低SSN,并制定了设计准则/经验法则。说明了减少SSN的专用电路设计技术。

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