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Piezoresistive strain sensing system for structural health and usage monitoring.

机译:压阻应变传感系统,用于结构健康和使用情况监控。

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摘要

As silicon based sensor technology continues to experience accelerating growth, there exists an obvious trend toward combining MEMS transducers with increasingly sophisticated circuits. In those integrated sensing systems, on-chip circuits can perform such operations as amplification, calibration, averaging and data translation of sensor output, greatly enhancing the overall integrity and modularity of the system output.; The goal of this work is to develop a single chip polysilicon strain sensing system with digital readout and on-chip self-test and self-calibration for structural health and usage monitoring. Polysilicon cantilever beam off surface strain sensor and polysilicon membrane type strain sensor fabricated by MEMS technology have been investigated. A low power CMOS sensor interface was developed based on experimental results.; In the sensor interface design, we implemented noise-immune digital readout of sensor output by 10-bit resolution 1Msample/sec successive approximation analog to digital converter. Because the sensor array consumed considerable chip area, an area-efficient successive approximation register was implemented with minimum flip-flops. To further minimize the chip area and power consumption, voltage-division segmented R-2R ladder digital to analog converter was designed as DAC core, which was fabricated in single poly, twin-well, CMOS process.; On-chip sensor self-test was developed for safety critical applications based on the built-in redundancy of strain sensor array and successive approximation measurement technique. A novel hardware implementation was developed to meet the random successive approximation requirements based on programmable DAC output. To improve the quality of digital subsystem concurrent error detection, we developed a noninvasive built-in current sensor for IDDQ testing based on Hall effect for I/V conversion.; Experimental results were presented and discussed, which compared favorably to other reported designs.
机译:随着基于硅的传感器技术继续经历加速增长,将MEMS换能器与日益复杂的电路相结合的趋势明显。在那些集成的传感系统中,片上电路可以执行诸如传感器输出的放大,校准,平均和数据转换等操作,从而大大增强了系统输出的整体完整性和模块化。这项工作的目标是开发一种具有数字读出和片上自检和自校准功能的单芯片多晶硅应变传感系统,以进行结构健康和使用情况监视。研究了利用MEMS技术制造的多晶硅悬臂梁离表面应变传感器和多晶硅膜型应变传感器。基于实验结果,开发了一种低功耗CMOS传感器接口。在传感器接口设计中,我们通过10位分辨率1Msample / sec逐次逼近模数转换器实现了传感器输出的抗干扰数字读出。由于传感器阵列消耗了大量芯片面积,因此使用最少的触发器实现了面积有效的逐次逼近寄存器。为了进一步最小化芯片面积和功耗,将分压分段的R-2R阶梯数模转换器设计为DAC内核,该内核采用单多晶硅,双阱,CMOS工艺制造。基于应变传感器阵列的内置冗余和逐次逼近测量技术,针对安全关键型应用开发了片上传感器自检。开发了一种新颖的硬件实现方案,以满足基于可编程DAC输出的随机逐次逼近要求。为了提高数字子系统并发错误检测的质量,我们开发了一种基于霍尔效应的I / V转换的无创内置电流传感器,用于IDDQ测试。提出并讨论了实验结果,与其他报道的设计相比,该结果令人满意。

著录项

  • 作者

    Jiang, Xuewen.;

  • 作者单位

    University of Minnesota.;

  • 授予单位 University of Minnesota.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 146 p.
  • 总页数 146
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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