首页> 外文学位 >Roughening of cobalt thin films on sapphire (110) upon annealing and superparamagnetic behavior of cobalt nanodots on sapphire (001).
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Roughening of cobalt thin films on sapphire (110) upon annealing and superparamagnetic behavior of cobalt nanodots on sapphire (001).

机译:蓝宝石(001)上钴纳米点的退火和超顺磁性行为使蓝宝石(110)上的钴薄膜变粗糙。

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摘要

Atomic force microscopy (AFM) was employed to investigate the surface roughness of 5.0 nm thick Co films as a function of the annealing temperature. Films were epitaxially grown on (110) sapphire via molecular beam epitaxy (MBE) and magnetron sputtering. Images were acquired in-situ at temperatures ranging between room temperature and 600°C. Surface roughening starts at 425°C and increases depending on the final annealing temperature and time. The films did not show a reversal of the roughening process upon sample cooling. Also a sub-monolayer film of Co was grown on Al2O 3 (0001) via MBE at room temperature. The film annealed at 400°C revealed the formation of dots with an average diameter of 17.6 nm and a height of 0.3 nm. Dots showed a superparamagnetic behavior with a blocking temperature of 130 K and an enhancement of the atomic magnetic moment over the bulk of approximately 9%.
机译:原子力显微镜(AFM)用于研究5.0 nm厚Co膜的表面粗糙度随退火温度的变化。膜通过分子束外延(MBE)和磁控溅射在(110)蓝宝石上外延生长。在室温至600°C之间的温度下原位采集图像。表面粗糙化从425°C开始,并根据最终退火温度和时间而增加。样品冷却后,薄膜没有显示出粗糙化过程的逆转。在室温下,还通过MBE在Al 2 O 3(0001)上生长Co的亚单层膜。在400℃下退火的膜表明形成了平均直径为17.6nm且高度为0.3nm的点。点表现出超顺磁行为,其阻断温度为130 K,并且原子磁矩在整个本体中提高了约9%。

著录项

  • 作者

    Espinosa, Jorge.;

  • 作者单位

    West Virginia University.;

  • 授予单位 West Virginia University.;
  • 学科 Physics Condensed Matter.; Physics Electricity and Magnetism.; Engineering Materials Science.
  • 学位 M.S.
  • 年度 2005
  • 页码 36 p.
  • 总页数 36
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 电磁学、电动力学;工程材料学;
  • 关键词

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