首页> 外文学位 >Debris characterization and mitigation of droplet laser plasma sources for EUV lithography.
【24h】

Debris characterization and mitigation of droplet laser plasma sources for EUV lithography.

机译:用于EUV光刻的液滴激光等离子体源的碎片表征和缓解。

获取原文
获取原文并翻译 | 示例

摘要

Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under development for fabricating semiconductor devices with feature sizes smaller than 32 nm. The optics to be used in the EUVL steppers is reflective optics with multilayer mirror coatings on each surface. The wavelength of choice is 13.5 nm determined by the optimum reflectivity of the mirror coatings. The light source required for this wavelength is derived from a hot-dense plasma produced by either a gas discharge or a laser. This study concentrate only on the laser produced plasma source because of its advantages of scalability to higher repetition rates.;The first part of this study investigates debris emissions from tin-doped droplet targets, in terms of aerosols and ions. Numerous tin aerosols can be created during a single laser-target interaction. The effects these interactions are observed and the depositions are investigated using SEM, AFM, AES, XPS, and RBS techniques. The generation of aerosols is found to be the result of incomplete ionization of the target material, corresponding to non-optimal laser coupling to the target for maximum CE. In order to determine the threats of the ion emission to the collector mirror coatings from an optimal, fully ionized target, the ion flux is measured at the mirror distance using various techniques. The ion kinetic energy distributions obtained for individual ion species are quantitatively analyzed. Incorporating these distributions with Monte-Carlo simulations provide lifetime estimation of the collector mirror under the effect of ion sputtering. The current estimated lifetime the tin-doped droplet plasma source is only a factor of 500 less than the stepper manufacturer requirements, without the use of any mitigation schemes to stop these ions interacting with the mirror.;The second part of this investigation explores debris mitigation schemes. Two mitigation schemes are applied to tin-doped droplet laser plasmas; electrostatic field mitigation, and a combination of a foil trap with a magnetic field. Both mitigation schemes demonstrate their effectiveness in suppressing aerosols and ion flux. A very small number of high-energy ions still pass through the combination of the two mitigation schemes but the sputtering caused by these ions is too small to offer a threat to mirror lifetime. It is estimated that the lifetime of the collector mirror, and hence the source lifetime, will be sufficient when tin-doped targets are used in combination with these mitigation schemes. (Abstract shortened by UMI.)
机译:极紫外光刻(EUVL)是正在开发的下一代光刻技术,用于制造特征尺寸小于32 nm的半导体器件。 EUVL步进器中使用的光学器件是在每个表面上均具有多层镜面涂层的反射光学器件。选择的波长为13.5 nm,这取决于镜面涂层的最佳反射率。该波长所需的光源来自气体放电或激光产生的热密等离子体。这项研究仅专注于激光产生的等离子体源,因为它具有可扩展至更高重复率的优势。这项研究的第一部分从喷雾剂和离子的角度研究了掺锡液滴靶的碎屑排放。在单个激光与目标的相互作用过程中会产生大量的锡气雾剂。观察到这些相互作用的影响,并使用SEM,AFM,AES,XPS和RBS技术研究沉积。发现气溶胶的产生是靶材料不完全电离的结果,这对应于非最佳激光耦合至靶以获得最大CE。为了确定离子从最佳的,完全电离的目标发射到集电极镜涂层的威胁,使用各种技术在镜距处测量离子通量。定量分析了单个离子物种获得的离子动能分布。将这些分布与Monte-Carlo仿真相结合,可在离子溅射作用下估算集电极镜的寿命。当前估计的掺杂锡的液滴等离子体源的寿命仅比步进机制造商的要求少500倍,而无需使用任何缓解方案来阻止这些离子与反射镜相互作用。;本研究的第二部分探讨了碎片缓解计划。两种缓解方案适用于掺锡的液滴激光等离子体。静电场的缓解,以及箔片阱与磁场的结合。两种缓解方案都证明了它们在抑制气溶胶和离子通量方面的有效性。仍然有极少数的高能离子通过两种缓解方案的组合,但是由这些离子引起的溅射太小,无法对镜寿命造成威胁。据估计,当将掺锡靶材与这些缓解方案结合使用时,集电极镜的寿命以及源寿命将足够。 (摘要由UMI缩短。)

著录项

  • 作者

    Takenoshita, Kazutoshi.;

  • 作者单位

    University of Central Florida.;

  • 授予单位 University of Central Florida.;
  • 学科 Engineering Electronics and Electrical.;Physics Fluid and Plasma.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 184 p.
  • 总页数 184
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号