首页> 外文学位 >Synthesis and characterization of group 6 and cobalt metal complexes containing nitrogen-rich donor ligands for metal nitride nanoparticles and thin films.
【24h】

Synthesis and characterization of group 6 and cobalt metal complexes containing nitrogen-rich donor ligands for metal nitride nanoparticles and thin films.

机译:含有富氮供体配体的6族和钴金属配合物的合成与表征,用于金属氮化物纳米粒子和薄膜。

获取原文
获取原文并翻译 | 示例

摘要

Metalorganic and organometallic group 6 source compounds for the growth of MNx and MNxCy thin films for application as diffusion barriers in integrated circuits by Atomic Layer Deposition (ALD) are limited to a few compounds. In addition, group 6 metal nitride nanoparticles and their use as diffusion barriers have not been explored. Accordingly, the work described entailed the synthesis and characterization of group 6 source compounds for metal nitride thin films and nanoparticles bearing nitrogen-rich ligands such as pyrazolato, triazolato, tetrazolato, and amidinato. All new complexes were characterized by spectroscopic and analytical techniques and by X-ray crystal structure determinations. Thin films of WNxC y were grown from the volatile and thermally stable W(NtBu)2(tBu 2pz)2 molecular precursor and ammonia by the ALD technique at 400-450 °C. Thermolysis of the nonvolatile M(NtBu)2(Ph 2pz)2 (M = Mo, W) molecular precursors at 800 °C afforded insoluble 2-3 nm M2N (M = 234 Mo, W) nanoparticles that were embedded in an amorphous carbon-oxygen matrix, as determined by analytical and spectroscopic techniques. Thermolysis of the same precursors at 425 °C afforded amorphous 2-3 nm nanoparticles, as determined by XRD. The nanoparticles prepared at 425 °C were not embedded in a matrix, and were soluble in tetrahydrofuran. This work provides the first description of tungsten nitride nanoparticles, as well as the first description of soluble group 4-6 nanoparticles. W 2N thin films were grown by the ALD technique from W2(NMe 2)6 and ammonia at 180-210 °C. Surface saturative growth was achieved at 180 °C with W2(NMe2)6 pulse lengths of ≥ 2.0 s. AIN thin films were used as protective overlayers, since the as deposited films were air and moisture sensitive. Several mixed ligand complexes of chromium(III) complexes bearing amidinato and pyrazolato, triazolato, or tetrazolato were synthesized and fully characterized. Most of these new complexes are volatile, sublime without decomposition at moderate temperatures, show no evidence for thermal decomposition below 300 °C, and are thus promising potential precursors for ALD growth.{09}In addition, this study provides the first example of an eta2-1,2,4-triazolato ligand coordinated to a transition metal ion with a partially filled d shell. Dimeric and monomeric chromium(II) pyrazolato complexes were also prepared and fully characterized. The dimeric complex Cr2(tBu2pz) 4 contains the longest known chromium-chromium bond distance. Finally, a series of tetramethylcyclobutadienecobalt(I){09}complexes containing{09}pyrazolato and tetrazolato with various coordination modes were prepared and characterized. These complexes are not volatile and decompose under sublimation conditions.
机译:用于通过原子层沉积(ALD)在集成电路中用作扩散阻挡层的MNx和MNxCy薄膜生长的有机金属和有机金属第6组源化合物仅限于少数化合物。另外,尚未探索第6族金属氮化物纳米颗粒及其作为扩散阻挡层的用途。因此,所描述的工作需要合成和表征金属氮化物薄膜和带有富氮配体如吡唑并,三唑并,四唑并和a酰胺的6族源化合物。所有新的配合物都通过光谱学和分析技术以及X射线晶体结构测定来表征。通过ALD技术在400-450°C下,从挥发性和热稳定的W(NtBu)2(tBu 2pz)2分子前体和氨中生长出WNxC y薄膜。非易失性M(NtBu)2(Ph 2pz)2(M = Mo,W)分子前体在800°C的热解提供了不溶的2-3 nm M2N(M = 234 Mo,W)纳米颗粒,该纳米颗粒嵌入无定形碳中-氧矩阵,通过分析和光谱技术确定。通过XRD测定,相同的前体在425°C的温度下热解,得到2-3 nm无定形纳米颗粒。在425℃下制备的纳米颗粒没有包埋在基质中,并且可溶于四氢呋喃。这项工作提供了氮化钨纳米粒子的第一个描述,以及可溶性4-6基纳米颗粒的第一个描述。 W 2N薄膜通过ALD技术从W2(NMe 2)6和氨在180-210°C下生长。 W2(NMe2)6脉冲长度≥2.0 s,在180°C时实现了表面饱和生长。 AIN薄膜用作保护性覆盖层,因为沉积的薄膜对空气和湿气敏感。合成并充分表征了具有bearing基和吡唑并,三唑并或四唑并的铬(III)配合物的几种混合配体配合物。这些新的复合物大多数都是易挥发的,在中等温度下不会升华,没有证据表明在300°C以下会发生热分解,因此有可能成为ALD生长的潜在前体。{09}此外,这项研究提供了第一个化合物的实例。 eta2-1,2,4-三唑并配体与过渡金属离子配成部分填充的d壳。还制备并充分表征了二聚和单体的吡唑并铬(II)络合物。二聚体Cr2(tBu2pz)4包含已知最长的铬-铬键距。最后,制备并表征了一系列含有{09}吡唑并和四唑并具有不同配位方式的四甲基环丁二烯钴(I){09}配合物。这些配合物不易挥发,在升华条件下会分解。

著录项

  • 作者

    El-Kadri, Oussama M.;

  • 作者单位

    Wayne State University.;

  • 授予单位 Wayne State University.;
  • 学科 Chemistry Inorganic.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 251 p.
  • 总页数 251
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无机化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号