PROCESS INTEGRATION OF NANOGLASS~(~R) E POROUS ULTRA LOW-K MATERIAL (k～2.2) WITH Cu METALLIZATION

摘要

For future high performance semiconductor products, the use of Cu and ultra low-k (ULK) dielectrics (k<2.4) becomes necessary in order to reduce the RC time delay. In this study, the process integration of Cu metallization and porous ultra low-k (NANOGLASS~(~R) E, K～2.2) is presented. Etch, ash, wet clean, CMP behaviors and electrical results from single damascene integration are discussed. With optimization of unit process recipes, the ultra low-k dielectric material NANOGLASS~(~R) E is successfully integrated in 0.18 μm single damascene structures.