In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric Si3N4cantilevers. The thermo-piezoelectric Si3N4cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34X34 thermo-piezoelectric Si3N4cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers.
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机译：在这项研究中，已经开发出用于常规高密度探针数据存储的常规CMOS电路上悬臂阵列的晶片级传输方法。转移的悬臂是与多晶硅加热器和压电传感器集成在一起的氮化硅（Si 3 N 4 ）悬臂，称为热压电Si 3 N 4 悬臂。用常规的p型硅晶片代替SOI晶片制造热压电Si 3 N 4 悬臂阵列。此外，我们已经开发了一种晶圆级悬臂传输工艺，该工艺仅需要一步悬臂传输工艺即可将CMOS电路与悬臂集成在一起。使用此过程，我们制造了单个热压电Si 3 N 4 悬臂，并在PMMA膜上记录了65nm的数据位。而且我们已经成功地将该方法用于在CMOS晶片上转移34X34热压电Si 3 N 4 悬臂阵列。最后，我们从其中一个悬臂获得了读取信号。
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