Porous SiLK™ Development for BEOL Integration

摘要

1. Low k dielectrics are required for interconnect structures to meet performance and low power product needs. 2. Porous dielectrics will be needed for future interconnect technologies Current focus is on understanding the influence of porosity on material properties and integration. 3. Difficult to integrate -Design and process changes required. 4. Initial integration of SiLK™ showed feasibility of organic low-k ILD. 5. With careful optimization and modifications, unit process development for SiLK™ shows extendibility for PSiLK™ integration. CMP, adhesion, liner coverage, and RIE profiles have to factored into integration planning. 6. Throughout its development, PSiLK™ was displayed a decrease in pore size and a concomitant decrease in dielectric constant. 7. IBM has integrated PSiLK™ in experimental lots at both the 0.13um and 0.10um nodes.