首页> 外文会议>Symposium on Thin-Films - Stresses and Mechanical properties Vii, held December 1-5, 1997, Boston, Massachusetts, U.S.A. >A method for independent measurement of elastic modulus and poisson's ratio of diamondlike carbon films
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A method for independent measurement of elastic modulus and poisson's ratio of diamondlike carbon films

机译:一种独立测量类金刚石碳膜弹性模量和泊松比的方法

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A simple method to measure the elastic modulus and Poisson's ratio of diamond-like carbon (DLC) films deposited on Si wafer was suggested. This method involved etching a side of Si substrate using the DLC film as an etching mask. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinusoidal edge, we can determine the strain of the film required to adhere to the substrate. Combined with independent stress measurement by laser reflection method, this method allows calculation of the biaxial elastic modulus, E/(1-v), where E is the elastic modulus and v Poisson's ratio of the DLC films. By comparing the biaxial elastic modulus with plane-strain modulus, E/(1-v~2), measured by nano-indentation, we could further determine the elastic modulus and Poisson's ratio, independently. This method was employed to measure the mechanical properties of DLC films deposited by C_6H_6 r.f. glow discharge at the deposition pressure 1.33 Pa. The elastic modulus, E, increased from 94 to 128 GPa as the negative bias voltage increased from 400 to 550 V. Poisson's ratio was estimated to be about 0.22 in this bias voltage range. For the negative bias voltages less than 400V, however, the present method resulted in negative Poisson's ratio. The limitation of the present method was discussed.
机译:提出了一种简单的方法来测量沉积在硅片上的类金刚石碳(DLC)膜的弹性模量和泊松比。该方法涉及使用DLC膜作为蚀刻掩模来蚀刻Si衬底的侧面。无硅衬底约束的DLC悬伸边缘呈周期性正弦形。通过测量正弦边缘的幅度和波长,我们可以确定粘附在基板上所需的薄膜应变。结合通过激光反射法进行的独立应力测量,该方法可以计算双轴弹性模量E /(1-v),其中E是DLC膜的弹性模量和v泊松比。通过比较纳米压痕法测得的双轴弹性模量与平面应变模量E /(1-v〜2),我们可以进一步独立地确定弹性模量和泊松比。该方法用于测量C_6H_6 r.f沉积的DLC膜的机械性能。沉积压力为1.33 Pa时辉光放电。随着负偏压从400 V增加到550 V,弹性模量E从94 GPa增加到128 GPa。在该偏压范围内,泊松比估计约为0.22。然而,对于小于400V的负偏置电压,本方法导致负泊松比。讨论了本方法的局限性。

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