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The Hall Carrier Mobility of AgBiTe_2-Ag_2Te Composite

机译:AgBiTe_2-Ag_2Te复合材料的霍尔载流子迁移率

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摘要

We prepared a series of (AgBiTe_2)_(1-x)(Ag_2Te)_x (0≤x≤l) composite materials by melt and cool down. The Hall coefficient and the electrical conductivity were measured by the standard van der Pauw technique over the temperature range from 93K to 283K from which the Hall carrier mobility was calculated. Ag_2Te had the highest mobility while the mobility of AgBiTe_2 was the lowest of all samples at 283K. However the mobility of the (AgBiTe_2)_(0.125)(Ag_2Te)_(0.875) composite material was higher than the motility of Ag_2Te below 243K. It seems that a small second phase dispersed in the matrix phase is effective against the increased mobility.
机译:我们通过熔融和冷却制备了一系列(AgBiTe_2)_(1-x)(Ag_2Te)_x(0≤x≤l)复合材料。在93K至283K的温度范围内通过标准van der Pauw技术测量霍尔系数和电导率,由此计算霍尔载流子迁移率。在所有样品中,Ag_2Te的迁移率最高,而AgBiTe_2的迁移率最低,为283K。然而,(AgBiTe_2)_(0.125)(Ag_2Te)_(0.875)复合材料的迁移率高于243K以下Ag_2Te的迁移率。看来分散在基质相中的小的第二相对增加的迁移率是有效的。

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