Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;
Applied Materials, 974 East Arques Avenue, Sunnyvale, California 94085, USA;
Applied Materials, 974 East Arques Avenue, Sunnyvale, California 94085, USA;
Applied Materials, 974 East Arques Avenue, Sunnyvale, California 94085, USA;
Applied Materials, 974 East Arques Avenue, Sunnyvale, California 94085, USA;
Applied Materials, 974 East Arques Avenue, Sunnyvale, California 94085, USA;
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;
机译:Si(100)上GaAs界面污染与反相畴界密度的定量相关性
机译:通过生长后退火溶解在Si(001)上的GaAs中的抗磷血域边界
机译:富铝γ-TiAl金属间化合物中Al 5 sub> Ti 3 sub>相中反相边界和反相畴的生长的蒙特卡罗模拟
机译:界面污染对Si(100)GaAs抗磷域域边界形成的影响
机译:GaAs-on-Si(001)中的反相域边界能量研究
机译:GaAs和GaP中反相边界的形成能:从头算研究
机译:尖锐反相域边界的界面张力
机译:利用会聚束电子衍射识别si上生长的Gaas反相边界