University of Florida, Department of Electrical and Computer Engineering, Gainesville, FL 32611;
University of Florida, Department of Electrical and Computer Engineering, Gainesville, FL 32611;
University of Florida, Department of Electrical and Computer Engineering, Gainesville, FL 32611;
University of Florida, Department of Electrical and Computer Engineering, Gainesville, FL 32611;
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611;
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611;
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611;
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611;
University of Florida, Department of Materials Science and Engineering, Gainesv;
机译:使用Algan / gan高电子迁移率晶体管差分二极管传感器的无线氢传感器网络
机译:栅极长度对纳米电子AIGAN / GaN高电子迁移率晶体管的电特性,以制造纳米电子学中的生物医学传感器
机译:基于AIGaN / GaN高电子迁移率晶体管的传感器的表面功能化研究
机译:无线氢传感器网络采用AlGaN / GaN高电子迁移率晶体管差分二极管传感器
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:氮化铝镓(GaN)/ GaN高电子迁移率晶体管传感器用于呼出气冷凝物中的葡萄糖检测
机译:氮化铝镓(GaN)/ GaN高电子迁移率晶体管传感器,用于呼出气冷凝物中的葡萄糖检测
机译:si,GaN和alGaN / GaN高电子迁移率晶体管(HEmT)晶片的非接触迁移率,载流子密度和薄层电阻测量。