Simulation of high performance quantum well GaN-based LED

摘要

The performance of quantum well GaN/AlGaN light emitting diode (LED) is reviewed for three different barriercompositions; symmetric barrier composition with low Al content, asymmetric barrier composition with higher Alcontent on p-type cladding layer and lower Al content on n-type cladding layer, and symmetric barrier composition withhigher Al content. The study was conducted using ATLAS/BLAZE & LUMINOUS software developed by SilvacoInternational Inc. Integrated radiative recombination rate was studied on applied voltages up to 5V. Results showedthree phases of LED performance with different applied voltages and these were explained using bandgap theory. I-Vcharacteristic for each design agrees with the total additional voltage drop equation for a quantum well structure. Thedominant radiative recombination rate regions in LED at low and high supplied voltages are also presented for the bestperformance LED design.