Light Emission from Si LED Controlling by a Gate Voltage and SOS Tunneling Junction

摘要

A novel Si LED with three terminals has been designed and fabricated compatible completely with standard n-well CMOS technology. It is composed by a combination of a forward biased p~+-n junction controlling by gate voltage and a poly-Si/ultrathin oxide/Si tunneling junction. The experimental results demonstrates that: (1)The optical emitting power of LED increases with both forward p~+-n junction current increasing and positive gate voltage increasing; (2) The optical emitting power of LED still increases with gate Voltage increasing while p~+-n junction forward current at zero; (3) The spectra of the optical output power on wavelength X occurs a peak near 1000nm. The results can be explained from the enhancement on the p-n junction forward current by the gate voltage induced barrier lowering effect and the S(poly-Si)OS tunneling junction theory.