x/SiO Improved Gradual Reset Phenomenon in SiN<inf>x</inf>-based RRAM by Diode-Connected Structure
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首页> 外文会议>2019 Silicon Nanoelectronics Workshop >Improved Gradual Reset Phenomenon in SiNx-based RRAM by Diode-Connected Structure
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Improved Gradual Reset Phenomenon in SiNx-based RRAM by Diode-Connected Structure

机译：二极管连接结构在基于SiN x 的RRAM中的改进的逐步复位现象

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摘要

In this work, we have confirmed that dependent reset switching phenomenon of SiNx/SiO2 RRAM is dependent on stop voltage (VSTOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.
机译：在这项工作中，我们已经确认了SiN \ n x\n/SiO\n 2 \ n RRAM取决于停止电压（V \ n STOP \ n），无论是直流还是脉冲操作。另外，已经证实可以通过调节施加的复位脉冲的幅度来获得改善的渐变电阻变化。通过对器件电阻变化的过程仿真和经验建模，可以确定仅在复位操作中可以控制电压分布，即使使用相同的复位脉冲，也会导致更多的线性和渐变电阻变化现象。

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  • 会议地点 Kyoto(JP)
  • 作者

    Min-Hwi Kim; Suhyun Bang; Tae-Hyeon Kim; Dong Keun Lee; Sungjun Kim; Seongjae Cho; Byung-Gook Park;

  • 作者单位

    Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea;

    Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea;

    Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea;

    Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea;

    The School of Electronics Engineering, Chungbuk National University, Cheongju, 28644, South Korea;

    Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, South Korea;

    Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    electric resistance; resistive RAM;

    机译：电阻;电阻RAM;;

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