Insulating properties of mixed-phase BN thin films in an MIS structure

摘要

The insulating properties of mixed-phase boron nitride films deposited by PACVD from non-toxic material, borane-ammonia, have been measured by fabricating a Al/BN-Si structure. The film showed a high resistivity and breakdown strength and I-V characteristics is essentially linear in the low voltage region. MIS capacitors on silicon substrates using these films showed normal behavior with a rather high negative charge density in the insulator and a low level of fast interface states. The surface state density was approximated by a U-shaped curve with a minimum interface state density of 1.8×10~(12) states/cm~2/eV.