ESR of 3C-SiC films prepared by lpcvd method

摘要

The defect structures produced in SiC layer formed by hot-wall type LPCVD reactor with an alternating supply of SiH_2Cl_2 and C_2H_2 in the temperature range of 800 to 1050℃ have been studied by ESR method. The ESR analysis revealed the presence of two kinds of paramagnetic defects, which is Si-dangling bond (g=2.0055, ΔH_(pp)=5.5 Oe) in Si amorphous region and defect centers (g=2.0031, ΔHpp=3.5 ～ 4.5 Oe) in SiC. Spin density of these ESR centers depend strongly on SiC growth temperatures.