Effect of reaction products in monocrystalline β-SiC/metal contact on contact resistivity

摘要

The solid state reactions between monocrystalline β-SiC thin film and metals such as Ni and Mo during heat treatment in Ar ambient were studied using XRD and AES. The contact resistivity of metal/SiC contacts was also measured as a function of annealing temperature using the extrapolation method. Above 600℃, Ni reacted with SiC to form Ni_2Si and free carbon, which did not influence the contact resistivity. No significant reaction was not observed in Mo/SiC contact thermally annealed at the temperatures up to 970℃. Above 1150℃, Mo reacted with SiC to form MoSi_2 and Mo_5Si_3 which did not also affect the contact resistivity significantly.