Electrical measurements on 6H-silicon carbide pn junctions

摘要

We have performed electrical measurements as a function of temperature to characterize the shallow and deep levels for 6H-SiC pn junctions. By admittance spectroscopy we have detected two levels, responsible of carrier freezing, with different thermal signatures that we suppose to be related to the Al acceptor level on inequivalent sites. No other deep level is found by DLTS or photocapacitance.