Band offset measurements of 3C-SiC/Si np heterojunction diodes grown by reactive magnetron sputtering

摘要

Reactive magnetron sputtering is used to. grow thin n-doped 3C-SiC films on a p-doped Si substrate. The IV characteristics of the pn helcrojunetion diode follows in the forward direction J=2.4·10~(-4) cxp(19.0VF) A/cm~2. In the reverse direction the current shows good agreement with a multi-step tunnelling mechanism model. The diode has also a high breakdown voltage. The electron alfiniiy and the conduction hand offset are determined to 4.3 eV and -0.3 eV respectively.