Planar depletion-mode 6H-SiC mosfets

摘要

Although inversion mode MOSFETs have been demonstrated in SiC, depletion-mode NMOSFETs presently satisfy the reliability requirements for 350℃ operation. The reasons presented here are based on high-temperature SiO_2 reliability studies and interface state measurements. The planar depletion-mode MOSFET was designed analytically, fabricated, and tested. I-V and transconductance measurements are given for 25℃, 200℃, and 350℃.